Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
نویسندگان
چکیده
Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy Appl. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buriedheterostructure quantum well lasers grown by molecular beam epitaxy Appl. Strainedlayer InGaAsGaAsAlGaAs gradedindex separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy Appl.
منابع مشابه
A periodic index separate confinement heterostructure quantum well laser
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...
متن کاملMBE Growth and Characteristics of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers
We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantumwell lasers emitting at 980nm in a novel configuration of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/A1GaAs) are utilized as optical confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers are grown by tem...
متن کاملPeriodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy
Organometallic vapor phase epitaxy was used to grow a novel periodic index separate confinement heterostructure (PINSCH) InGaAs/AlGaAs multiple quantum well (MQW) laser. Secondary ion mass spectrometry and transmission electron microscopy were used to characterize the structure. The performance of the PINSCH laser was compared with that of a graded index separate confinement heterostructure (GR...
متن کاملSTRAINED-LAYER 1.5pm WAVELENGTH InGaAs/lnP MULTIPLE QUANTUM WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY
A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,+,As/ In,Ga, .,As, -”P, strained-layer multiple quantum well (SLMQW) lasers over lattice-matched MQW lasers. Threshold current density was found to depend sensitively on the InAs content x and thickness d of the In,Ga, -.As quantum wells. Threshold current densities as low as 370A/cm2 and interna...
متن کاملSubmilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser
Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).
متن کامل